4 results
Reduction of Triangular Defects on 100mm 4° off-axis 4H-SiC using a Chloride Based CVD process
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 29 May 2012, mrss12-1433-h04-17
- Print publication:
- 2012
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Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D07-10
- Print publication:
- 2008
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High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B09-03
- Print publication:
- 2006
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Effects of Electrode Spacing on Reactive Ion Etching of 4H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T8.8.1
- Print publication:
- 2000
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